Digital Electronics- Writer’s choice-Engineering

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Design Course Work for ELEC143
Report Deadline: Wednesday 25
th April by 5pm, submitted on VITAL
Assessment: 15% of module mark
Aim: Design a two-stage inverter circuit shown in
Fig.1. The work will initially involve calculating
respective dimensions of the different devices within
the circuit (i.e. A, B, C and RL), using appropriate
equations and parameters/constants provided below.
Subsequently, respective layouts for each of the
devices, and the overall circuit including interconnects
and contact pads, needs to be generated accurately,
on scaled or graph paper/s with stipulated scale (e.g.
1µm = 1cm). Make sure to accurately include the
alignment error between layouts and utilise minimal area by arranging the layouts
appropriately. All dimensions and areas of the layouts must be expressed in terms of the
minimum feature size given below.
Description: The circuit in Fig. 1 consists of a two-stage inverter, where the intermediated
output from the 1st inverter Vo’ feds into the input gate of the 2nd inverter. The input and
output of this circuit is Vin and Vout respectively. The driver of both of the inverters consists
of enhancement type n-MOS transistors A and B. It can assume that these transistors have
the same aspect ratio (W/L), and threshold voltage of 0.3 V.
The load device of the 1
st inverter is an (active) saturated n-MOS transistor C, whilst the 2nd
inverter has a (passive) implanted resistor load RL. Note the resistance of C can be
assumed to be equal to that of RL, and similarly, the resistance of A is identical to the
resistance of B, when the transistors are on. However note the dimension of C is not the
same as RL since they are different devices. Refer to the p-n junction (passive load) notes
to work out dimensions for RL, assuming a sheet resistance for the technology given below.
And to assist you with the calculation for the transistor dimensions, assume a logic 1 input
to A, and thus select appropriate value for the intermediate output voltage Vo’, to
correspond to logic 0. Note this value of Vo’ for logic0 needs to be lower than threshold
voltage of the driver B so as to ensure that the transistor remains off at logic 0.
Vin
Vout
Vo
‘
Fig. 1
VDD
C
A
RL
B
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Note for the layouts you must take into account the alignment accuracy a, which can also
be assumed to be equal to the minimum feature size or multiple of it. Below are respective
parameter values to be used in the calculation:
i. Minimum feature size m = 0.5 µm
ii. Supply voltage VDD = 5V (Logic 1 input)
iii. Threshold voltage of transistors, VT = 0.3 V
iv. Sheet resistance 150 /square
v. Device constant is given as below; note mobility  and gate capacitance Co can be
assumed to be the same for all transistors.
where βo = 1.8  10-4 AV-2
Useful hints:
1. Initially focus on the first inverter and assume a logic 1 input. Note load C is always on
and saturated, whilst with a logic 1 input to the driver A, this transistor is also on, and
thus the current flowing between the two devices will be the same. Consequently, using
appropriate drain current expressions for the two transistors, determine the ratio of the
aspect ratios of the driver to the load. You will need to select appropriate values,
ensuring the same ratio is maintained.
2. The resistance values for the two loads are the same i.e. RC = RL. To determine their
dimensions i.e. L and W, of the implanted resistor RL, use the given the sheet resistance
and consequently calculate the number of squares required.
Report:
Provide a brief description of the circuit operation in Fig. 1. Include all calculations and
justification to any assumptions made. Represent all respective individual design layouts
for A, B, C and RL, and the overall layout on scaled graph papers, and in terms of the
minimum feature size. Use different shading to indicate different regions and include
appropriate alignment errors between respective layouts. Make sure to utilise the area
effectively particularly on the overall layout where the interconnects and contact pads need
to be included.
 o o   
W W C
L L
    