Below is an image from my research at NIST and I think you all are equipped to solve to identify the mechanism of deformation. This is a cross-sectional electron image of an extreme ultra-violet (EUV) mask (used for lithography or printing or nanoscale electronic circuits by Intel). The EUV mask is composed of a Ni capping layer followed by stacked layers of Molybdenum (Mo, dark layer) and Silicon (Si, light layer) as shown in (a), all on top of a Silicon substrate.
It was proposed to try to use the helium ion beam to cut or “machine” the EUV mask, however other unexpected phenomena occurred. First, there is an observed shrinking of the EUV mask thickness (b,c), second, the layers become obscured in the top of the stack (c,d), and third there is an expansion and ultimately, the formation of bubbles (d).
Given that pure Mo has BCC structure (density=10.28 g/cm3) and pure Si has diamond cubic structure (density=2.33 g/cm3, see your book for more details on this structure), with the addition of small amount of energy it is possible to form MoSi2 with body-centered tetragonal structure (where a =0.321 nm and c = 0.452 nm), as shown below.
Give an explanation of the problem and what you think is happening, then answer these questions.
Questions: